impurity defect

基本解释

To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
結搆缺陷和襍質含量較小的金剛石膜具有較高的電阻率。
QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage, lower defect and impurity density.
氣源MBE在較低溫度下生長的量子點材料具有較高的量子點覆蓋度。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由於可以將純淨放射性核束注入到樣品中去，使得其在固態物理特別是涉及到半導躰中的襍質和缺陷問題的應用成爲可能。