PHEMT

基本解释

• 赝配高电子迁移率晶体管

同根派生

• PHEMT相关词

英汉例句

• PHEMT transistor(ATF-35143) is used in this design.
  设计采用了PHEMT晶体管(ATF-35143)。
• Subsequently analyzing the principle of broadband matching technology with GaAs PHEMT model and S-paramter .
  结合GaAs PHEMT模型和S端口参数分析了宽频带匹配技术的原理;
• This article will describe followsings: Analyzed the basic physical model of pHEMT such as carrier mobility, carrier generation and recombination models.
  本论文的主要工作是： 分析了诸如载流子迁移率模型、产生复合模型等pHEMT的基本物理模型以及基本工作原理；
• Commercial GaAs pHEMT transistors, Agilent ATF-35143, were used in this 2-stage amplifier. At a physical temperature 15K the amplifier achieves noise temperature between 3.2K and 3.8K over 1600MHz to 1740MHz band.
  该放大器采用了Agilent 公司ATF-35143 假晶高电子迁移率场效应管(pHEMT),为两级级联结构,频率范围1600MHz~1740MHz。
• The representativemanufacturing process of pHEMT and discussed such as mesa insulates process,electrode process, photoetching process, metal lift-off process passivation, andselective-wet etching process. Two special topic are founded on?
  对pHEMT MMIC典型工艺制作技术如台面隔离技术、电极形成技术、光刻技术、金属剥离技术、钝化技术以及栅凹槽的选择性湿法腐蚀技术进行了研究，同时将“多层材料结构的选择性湿法腐蚀技术”以及“氮化硅钝化保护工艺对pHEMT性能的影响”作为专题，进行详细研究探讨，研究结果如下：

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