annealing activation

基本解释

For the whole process of homogenizing annealing, the leading factor for the change of Al-alloy-anode's activation properties is the change of crystal defects.
整个退火过程中，晶体缺陷的变化对铝合金阳极活性改变影响最大。
The activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices were calculated by annealing model.
根据退火模型计算了CMOS器件辐照后25、100℃等温和25~250℃等时退火过程中激发能的分布。
The mechanism of elementary redistrib utionand annealing embrittlement during relaxation Was discussed on the viewpoint ofthe activation energy of atomic diffusion in Ni-P amorphous being variables.
本文从非晶中原子扩散激活能可变化的观点出发，对弛豫过程中元素再分布和脆化机制进行了讨论。