bias sputtering

基本解释

The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature.
实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射PTFE靶等离子体气氛的影响规律。
This article mainly deals with the relationship between the negative bias of the substrate and the magnetron-sputtering ion plating aluminum film on the co- pper.
本文主要论述基板员偏压与铜基体磁控溅射离子镀铝膜的关系。