floating gate

基本解释

Today's flash memory devices use a single floating gate to store an electric charge, which represents data.
如今的闪存设备是用一个单独的浮置栅极来存储电荷，来保持数据。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
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In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。

The planar cell structure integrated a Hi-K (high capacitance) metal gate stack into the NAND production to allow for smaller floating gates and thus higher storage capacity.
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