AlGaInP

基本解释

• 铝镓铟磷

同根派生

• AlGaInP相关词

英汉例句

• Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
  引用该论文 陈贵楚;范广涵;陈练辉;刘鲁.
• For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
  对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
• Application of wafer bonding in AlGaInP high brightness LED devices
  晶片键合在AlGaInP发光二极管中的应用
• A novel AlGaInP thin-film light emitting diode with Omni directional reflector
  新型全方位反射铝镓铟磷薄膜发光二极管
• Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
  红色AlGaInP激光器的特性及热特性分析

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