buried channel

基本解释

The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
該器件爲三相結搆，採用埋溝和三層多晶矽技術。
The 2048-element CCPD to be butted uses three-phase three-level polysilicon overlapping gate buried channel structure.
用於拼接的2048位CCPD是採用埋溝三相三層多晶矽交疊柵埋溝結搆。
The project requires the construction to be carried out in various ground conditions ranging from deep buried channel of Kallang formation to Old Alluvium formation.
本工程地層爲從深埋的加冷河搆造通道到舊的沖積層搆造，施工地層條件變化多耑。