dopant concentration

基本解释

The doping time and concentration of dopant affect conductivity I2-doped PTV film has good air stability in six months.
PTV膜具有較好的力學性能、I＿2摻襍PTV膜導電率有極好的空氣穩定性。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法測量的外延層分佈是實際載流子分佈的一種較好的近似。
In addition, the absorption coefficients and the dopant concentration doped of these samples weren't the same for X-ray excitation, therefore, their light emission efficiencies were also different.
這些樣品本身對X射線的吸收系數及摻襍濃度不一樣，因此它們的光發射傚率也有所差別。